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HiPerFET TM
Power MOSFET
N-Channel Enhancement Mode
Avlanche Rated, High dv/dt, Low t rr
Preliminary data
IXFH 22 N55 V DSS
I D (cont)
R DS(on)
t rr
= 550 V
= 22 A
= 0.27 W
￡ 250 ns
Symbol
Test Conditions
Maximum Ratings
TO-247 AD
V DSS
V DGR
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M W
550
550
V
V
V GS
V GSM
I D25
Continuous
Transient
T C = 25 ° C
± 20
± 30
22
V
V
A
D (TAB)
I DM
I AR
E AR
dv/dt
P D
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
I S ￡ I DM , di/dt ￡ 100 A/ m s, V DD ￡ V DSS ,
T J ￡ 150 ° C, R G = 2 W
T C = 25 ° C
88
22
30
5
300
A
A
mJ
V/ns
W
G = Gate,
S = Source,
Features
D = Drain,
TAB = Drain
T J
T JM
-55 ... +150
150
° C
° C
? International standard packages
JEDEC TO-247 AD
T stg
T L
1.6 mm (0.063 in) from case for 10 s
-55 ... +150
300
° C
° C
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
M d
Weight
Mounting torque
1.13/10 Nm/lb.in.
6 g
rated
? Low package inductance (< 5 nH)
- easy to drive and to protect
? Fast intrinsic Rectifier
Applications
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ.
max.
?
?
?
Power Factor Control Circuits
Uninterruptible Power Supplies (UPS)
Battery chargers
V DSS
V GS = 0 V, I D = 250 m A
550
V
?
Switched-mode and resonant-mode
power supplies
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 4 mA
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
2
4.5
± 100
250
1
V
nA
m A
mA
? DC choppers
? Temperature and lighting controls
? Low voltage relays
Advantages
? Easy to mount with 1 screw
R DS(on)
V GS = 10 V, I D = 0.5 ? I D25
Pulse test, t ￡ 300 m s, duty cycle d ￡ 2 %
0.27
W
(isolated mounting screw hole)
? Space savings
? High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
94527A (10/95)
1-4
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